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导师简介-王尘

 

技术职称:副教授

所获学位:博士

研究方向:半导体光电子材料与器件

电子邮箱:chenwang@xmut.edu.cn

个人简介

王尘,男,副教授。20159毕业于厦门大学微电子学与固体电子学专业,工学博士学位20162月入职于厦门理工学院光电与通信工程学院。主要研究方向为硅基光电子材料与器件、氧化镓等宽禁带薄膜及器件、激光与物质相互作用。发表SCI论文近30篇,作为项目负责人主持科研项目4项。

主持科研项目

1、国家自然科学基金(青年科学基金),脉冲激光诱导金属与锗反应接触界面微结构改性及杂质输运机理研究61904115),起止时间:2020/01-2022/12,研究经费23万,主持

2、福建省自然科学基金(青年科学基金),纳秒脉冲激光作用下锗中n型杂质输运与缺陷演变机理研究2018J05115),起止时间:2018/04-2021/04,研究经费3万,主持

3、厦门理工学院科研攀登项目,脉冲激光在硅基锗薄膜材料及其器件中应用研究(XPDKQ18027),起止时间:2019/01-2020/12,研究经费2万,主持

4、厦门理工学院高层次人才科研项目,磷离子注入Ge中脉冲激光退火的研究YKJ16012R,起止时间:2016/06-2019/056万,主持

主要论文代表作

[1] Chen Wang(#) ; Yihong Xu; Cheng Li; Haijun Lin, Mingjie Zhao, Improved performance of Al/n+Ge Ohmic contact and Ge n+/p diode by two-step annealing method, Acta Physica Sinica, 2019, 68(17), 178501

[2] Chen Wang(#) ; Yi-Hong Xu, Song-Yan Chen, Cheng Li, Jian-Yuan Wang, Wei Huang, Hong-Kai Lai, and Rong-Rong Guo, Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer , Chinese Physics B, 2018, 27(6): 067303

[3] Chen Wang(#) ; Yihong Xu; Cheng Li; Haijun Lin, Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation, Chinese Physics B, 2018, 27(1): 0185021~0185024

[4] Chen Wang(#) ; Yihong Xu; Cheng Li; Haijun Lin, Fabrication and characteristics of high performance SOI-based Ge PIN waveguide photodetector, Acta Physica Sinica, 2017, 66(19), 198502

[5] Chen Wang (#), Cheng Li, Jiangbin Wei, Guangyang Lin, Xiaoling Lan, Xiaowei Chi, Chao Lu, Zhiwei Huang, Wei Huang, Hongkai Lai, and Songyan Chen, High performance Ge p-n photodiode achieved with pre-annealing and excimer laser annealing, IEEE Photonics Technology Letters, 2015, 27(14):1485-1488.

[6] Chen Wang (#), Cheng Li, Guangyang Lin, Weifang Lu, Jiangbin Wei, Wei Huang, Hongkai Lai, Songyan Chen, Zengfeng Di, and Miao Zhang, Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing, IEEE Transactions on Electron Devices, 2014, 61(9): 3060-3064.

[7] Chen Wang (#), Cheng Li, Shihao Huang, Weifang Lu, Guangming Yan, Maotian Zhang, Huanda Wu, Guangyang Lin, Jiangbin Wei, and Wei Huang, Phosphorus diffusion in germanium following implantation and excimer laser annealing, Applied surface science, 2014, 300: 208-212.

[8] Chen Wang (#), Cheng Li, Shihao Huang, Weifang Lu, Guangming Yan, Guangyang Lin, Jiangbin Wei, Wei Huang, Hongkai Lai, and Songyan Chen. Low specific contact resistivity to n-Ge and well-behaved Ge n+/p diode achieved by implantation and excimer laser annealing. Applied Physics Express. 2013, 6(10): 106501.

[9] Guangyang Lin, Chen Wang*, Cheng Li*, Chaowen Chen, Zhiwei Huang, Wei Huang, Songyan Chen, Hongkai Lai, Chunyan Jin, and Jiaming Sun. Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature, Applied Physics Letters, 2016, 108(19): 191107.

[10] Wang Jian-Yuan(#), Wang Chen, Li Cheng, Chen Song-Yan. Selective area growth of Ge film on Si, Acta Phys. Sin. 2015, 64(12): 128102.

[11] Weifang Lu(#), Cheng Li, Guangyang Lin, Chen Wang, Shihao Huang, Jiangbin Wei, Xiaoling Lan, Songyan Chen and Haiyan Ou, Ge nanobelts with high compressive strain fabricated by secondary oxidation of self -assembly SiGe rings. Materials Research Express, 2015, 2(1): 015009.

[12] Huan Da Wu(#), Chen Wang, Jiang Bin Wei, Wei Huang, Cheng Li, Hong Kai Lai, Jun Li, Chunli Liu, and Song Yan Chen, Ohmic Contact to nType Ge with Compositional W Nitride, IEEE Electron Device Letters, 2014, 35(12): 1188-1190.

[13] Hanhui Liu(#), Peng Wang, Dongfeng Qi, Xin Li, Xiang Han, Chen Wang, Songyan Chen, Cheng Li and Wei Huang. Ohmic contact formation of metalamorphous-Gen-Ge junctions with an anomalous modulation of Schottky barrier height, Appled Physics Letters, 2014, 105(19): 192103.

[14] Wei Huang(#), Mengrao Tang, Chen Wang, Cheng Li, Jun Li, Songyan Chen, Chunlai Xue, and Hongkai Lai, Texture Evolution and Grain Competition in NiGe Film on Ge(001), Applied Physics Express, 2013, 6(7): 075505.

[15] Mengrao Tang(#), Guangyang Lin, Cheng Li, Chen Wang, Maotian Zhang, Wei Huang, Hongkai Lai, and Songyan Chen, Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer, Journal of Applied Physics, 2013, 114(2): 023515.

[16] Shihao Huang(#), Cheng Li, Chengzhao Chen, Chen Wang, Guangming Yan, Hongkai Lai, Songyan Chen. In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition. Applied Physics Letters, 2013, 102(18): 182102.

[17] Zheng Wu(#), Chen Wang, Wei Huang, Cheng Li, Hongkai Lai, and Songyan Chen, Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity, ECS Journal of Solid State Science and Technology, 2012, 1(1): 30-33.

 

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